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- [2] Characterization of polarity of plasma-assisted molecular beam epitaxial GaN{0001} film using coaxial impact collision ion scattering spectroscopy Sonoda, Saki, 2000, JJAP, Tokyo (39):
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- [5] Terminating structure of MBE grown GaN{0001} film surface identified by coaxial impact collision ion scattering spectroscopy BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 349 - 352
- [6] Determination of lattice polarity and surface relaxation of ZnO(0001)-Zn surface by coaxial impact-collision ion scattering Spectroscopy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (37-41): : L1285 - L1288
- [7] Coaxial impact collision ion scattering spectroscopy (CAICISS) analysis for the polarity conversion of GaN films grown on nitrided sapphire substrates PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 150 - 153
- [8] Terminating structure of plasma-assisted molecular beam epitaxial GaN{0001} film surface identified by coaxial impact collision ion scattering spectroscopy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (6B): : L703 - L705
- [10] Surface characterization of GaN(0001) grown by liquid phase epitaxy using coaxial impact-collision ion scattering spectroscopy Japanese Journal of Applied Physics, 2008, 47 (9 PART 1): : 7281 - 7284