Effect of surface oxides on the creation of point defects in GaAs studied by slow positron beam

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[1] Lee, Jong-Lam
[2] Wei, Long
[3] Tanigawa, Shoichiro
[4] Oigawa, Haruhiro
[5] Nannichi, Yasuo
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Lee, Jong-Lam | 1600年 / 30期
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