Mechanisms determining three-dimensional SiGe island density on Si(001)

被引：0
|
作者：
University of Wisconsin-Madison, Madison, WI 53706, United States [1 ]
机构：
来源：
J Electron Mater | / 5卷 / 426-431期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
18
引用
收藏
相关论文
共 50 条
  • [1] Mechanisms determining three-dimensional SiGe island density on Si(001)
    Sullivan, JS
    Evans, H
    Savage, DE
    Wilson, MR
    Lagally, MG
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) : 426 - 431
  • [2] Mechanisms determining three-dimensional SiGe lsland density on Si(001)
    J. S. Sullivan
    H. Evans
    D. E. Savage
    M. R. Wilson
    M. G. Lagally
    Journal of Electronic Materials, 1999, 28 : 426 - 431
  • [3] Three-dimensional isocompositional profiles of buried SiGe/Si(001) islands
    Katsaros, G.
    Stoffel, M.
    Rastelli, A.
    Schmidt, O. G.
    Kern, K.
    Tersoff, J.
    APPLIED PHYSICS LETTERS, 2007, 91 (01)
  • [4] Three-dimensional Si islands on Si(001) surfaces
    Shklyaev, AA
    Ichikawa, MA
    PHYSICAL REVIEW B, 2002, 65 (04) : 1 - 6
  • [5] Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates
    Isa, F.
    Pezzoli, F.
    Isella, G.
    Meduna, M.
    Falub, C. V.
    Mueller, E.
    Kreiliger, T.
    Taboada, A. G.
    von Kaenel, H.
    Miglio, Leo
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (10)
  • [6] Atomically resolved nucleation and initial growth of a Ag three-dimensional island on Si(001) substrate
    Takeuchi, Osamu
    Kageshima, Masami
    Sakama, Hiroshi
    Kawazu, Akira
    PHYSICAL REVIEW B, 2011, 83 (20):
  • [7] Island formation and faceting in the SiGe/Si(001) system
    Rastelli, A
    von Känel, H
    SURFACE SCIENCE, 2003, 532 : 769 - 773
  • [8] Surface evolution and three-dimensional shape changes of SiGe/Si(001) islands during capping at various temperatures
    Stoffel, M.
    Rastelli, A.
    Schmidt, O. G.
    SURFACE SCIENCE, 2007, 601 (14) : 3052 - 3059
  • [9] Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers
    Yurasov, D. V.
    Drozdov, Yu. N.
    Shaleev, M. V.
    Novikov, A. V.
    APPLIED PHYSICS LETTERS, 2009, 95 (15)
  • [10] Surface morphology of three-dimensional Si islands on Si(001) surfaces
    Shklyaev, AA
    Zielasek, V
    SURFACE SCIENCE, 2003, 541 (1-3) : 234 - 241
12345