Creation of metastable defects in a-Si:H by keV-electron irradiation at different temperatures

被引：12

作者：

Diehl, F. ^{[1
]}

Herbst, W. ^{[1
]}

Bauer, S. ^{[1
]}

Schroder, B. ^{[1
]}

Oechsner, H. ^{[1
]}

机构：

[1] Universitaet Kaiserslautern, Kaiserslautern, Germany

来源：

Journal of Non-Crystalline Solids | 1996年 / 198-200卷 / pt 1期

关键词：

support by the BMBF is gratefully ac-;

D O I：

10.1016/0022-3093(95)00717-2

中图分类号：

学科分类号：

摘要：

引用

页码：436 / 440

共 50 条

[1] Creation of metastable defects in a-Si:H by keV-electron irradiation at different temperatures
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[2] A SEMIQUANTITATIVE MODEL FOR THE CREATION KINETICS OF METASTABLE DEFECTS IN A-SI-H BY KEV-ELECTRON IRRADIATION
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[10] THERMAL CREATION OF METASTABLE DEFECTS IN A-SI-H
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