AMORPHOUS SILICON PHOTOTRANSISTOR ON A GLASS SUBSTRATE.

被引：0
|
作者：
Wu, B.S. [1 ]
Chang, Chun-Yen [1 ]
Fang, Yean-Yuen [1 ]
Lee, R.H. [1 ]
机构：
[1] Natl Cheng Kung Univ, Tainan, Taiwan, Natl Cheng Kung Univ, Tainan, Taiwan
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
13
引用
收藏
页码：2192 / 2196
相关论文
共 50 条
  • [1] AMORPHOUS-SILICON PHOTOTRANSISTOR ON A GLASS SUBSTRATE
    WU, BS
    CHANG, CY
    FANG, YY
    LEE, RH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2192 - 2916
  • [2] AMORPHOUS SILICON SOLAR CELLS USING A METAL SUBSTRATE.
    Yamanaka, Mitsuyuki
    Hayashi, Yutaka
    Karasawa, Hideyuki
    Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 1987, 51 (5-6): : 30 - 37
  • [3] TRANSPORT PROPERTIES OF AMORPHOUS SILICON FILMS ON QUARTZ SUBSTRATE.
    Chakrabarti, B.
    Chaudhuri, S.
    Pal, A.K.
    1600, (22):
  • [4] HYDROGENATED AMORPHOUS SILICON SOLAR CELL ON ORGANIC POLYMER SUBSTRATE.
    Okaniwa, Hiroshi
    Nakatani, Kenji
    Asano, Mitsuo
    Suzuki, Kazutomi
    Yano, Mitsuaki
    Hirasaki, Masao
    Hamakawa, Yoshihiro
    Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E, 1983, E66 (01): : 34 - 38
  • [5] SILICON THROUGH-HOLE SUBSTRATE.
    Hayashi, Yutaka
    Hayashi, Funmiko
    Plummer, James D.
    Meindl, James D.
    Bulletin of the Electrotechnical Laboratory, Tokyo, 1976, 40 (4-5): : 409 - 416
  • [6] FINE PATTERN ETCHING TECHNIQUE OF SILICON SUBSTRATE.
    Kawabata, Ryohei
    Kimura, Daisuke
    Komiya, Hideo
    Shimizu, Hiroaki
    Shapu Giho/Sharp Technical Journal, 1985, (33): : 47 - 54
  • [7] Process Analysis and Optimization on PECVD Amorphous Silicon on Glass Substrate
    Ong, Yan Ying
    Chen, Bang Tao
    Tay, Francis E. H.
    Iliescu, Ciprian
    INTERNATIONAL MEMS CONFERENCE 2006, 2006, 34 : 812 - 817
  • [8] Properties of Double Dielectric Layer on a Silicon Substrate.
    Jakubowski, Andrzej
    Siennicki, Antoni
    Elektronika Warszawa, 1981, 22 (04): : 6 - 10
  • [9] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON A NOVEL 800 degree C GLASS SUBSTRATE.
    Troxell, John R.
    Harrington, M.I.
    Erskine Jr., James C.
    Dumbaugh, W.H.
    Fehlner, F.P.
    Miller, R.A.
    Electron device letters, 1986, EDL-7 (11): : 597 - 599
  • [10] UNIDRIECTIONAL GROWTH OF SILICON LAYERS ON A GRAPHITIZIED FABRIC SUBSTRATE.
    Brantov, S.K.
    Epelbaum, B.M.
    Tatarchenko, V.A.
    Materials Letters, 1984, 2 (4 A) : 274 - 277
12345