Stress measurements in sub-μm Si structures using Raman spectroscopy

被引:0
|
作者
Inst for Semiconductor Physics, Oder, Germany [1 ]
机构
来源
Diffus Def Data Pt B | / 519-524期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Stress measurements in sub-μm Si structures using Raman spectroscopy
    Dombrowski, KF
    De Wolf, I
    SOLID STATE PHENOMENA, 1998, 63-4 : 519 - 524
  • [2] Stress measurements in Si microelectronics devices using Raman spectroscopy
    De Wolf, I
    JOURNAL OF RAMAN SPECTROSCOPY, 1999, 30 (10) : 877 - +
  • [4] Composition and stress analysis in si structures using micro-Raman spectroscopy
    McCarthy, J
    Bhattacharya, S
    Perova, TS
    Moore, RA
    Gamble, H
    Armstrong, BM
    SCANNING, 2004, 26 (05) : 235 - 239
  • [5] Thickness measurements of Si1-xGex layers on Si mesa structures using Raman spectroscopy
    Wasserman, A
    Roth, DJ
    Beserman, R
    Hoffman, A
    Dettmer, K
    APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3407 - 3409
  • [6] Stress measurements in MEMS using Raman spectroscopy
    Amimoto, ST
    Chang, DJ
    Birkitt, AD
    MATERIALS AND DEVICE CHARACTERIZATION IN MICROMACHINING, 1998, 3512 : 123 - 129
  • [7] Flexible tactile sensor for shear stress measurement using transferred sub-μm-thick Si piezoresistive cantilevers
    Noda, Kentaro
    Onoe, Hiroaki
    Iwase, Eiji
    Matsumoto, Kiyoshi
    Shimoyama, Isao
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2012, 22 (11)
  • [8] Interference microscopy of sub-λ structures: a rigorous computation method and measurements
    Universitaet Stuttgart, Stuttgart, Germany
    Opt Commun, 1-2 (61-74):
  • [9] Stress measurements using ultraviolet micro-Raman spectroscopy
    Dombrowski, KF
    De Wolf, I
    Dietrich, B
    APPLIED PHYSICS LETTERS, 1999, 75 (16) : 2450 - 2451
  • [10] Mechanical stress measurements using micro-Raman spectroscopy
    De Wolf, I
    Maes, HE
    MICROSYSTEM TECHNOLOGIES, 1998, 5 (01) : 13 - 17