Design of a Surface-Illuminated-Type Semiconductor Optical Modulator with Multi-Quantum-Well Structures

被引:0
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作者
Kuwamura, Yuji [1 ]
Nishiuma, Yoshitake [1 ]
Yamada, Minoru [1 ]
机构
[1] Faculty of Engineering, Kanazawa University, Kanazawa, 920-8667, Japan
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D O I
10.1002/(SICI)1520-6432(200005)83:53.0.CO;2-3
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摘要
A surface-transmission-type semiconductor optical modulator using multi-quantum-well structures is designed. In order to realize a high extinction ratio and a low insertion loss with a lower driving voltage, a structure is proposed in which the voltage is applied in the transverse direction of the quantum well by means of comb-shaped conductive layers. The thickness of each layer is discussed. As an example of theoretical design with optimum conditions, a device structure realizing an extinction ratio between 10 and 20 dB and an insertion loss of 2 dB at a driving voltage of 5 V is presented. A high operating speed, up to several gigahertz, can be expected in a device with a surface area of 20 × 20 μm2. © 2000 Scripta Technica.
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页码:28 / 39
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