INFLUENCE OF GROWTH DEFECTS ON THE ELECTRICAL PROPERTIES OF RADIATION-DOPED SILICON.

被引：0
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作者：
Gres'kov, I.M.
Smirnov, B.V.
Solov'ev, S.P.
Stuk, A.A.
Kharchenko, V.A.
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来源：
| 1978年 / 12卷 / 10期
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摘要：
SEMICONDUCTING SILICON
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页码：1118 / 1120
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