Photoluminescence of porous silicon in the light of defects in silicon substrate

被引：0
|
作者：
Surma, B. [1 ]
Misiuk, A. [1 ]
Wnuk, A. [1 ]
Brzozowski, A. [1 ]
机构：
[1] Inst of Electronic Materials, Technology, Warszawa, Poland
来源：
Electron Technology (Warsaw) | 2000年 / 33卷 / 04期
关键词：
Czochralski silicon substrate - Oxygen precipitation;
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学科分类号：
摘要：
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页码：592 / 596
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