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- [1] POLARIZATION RAMAN MICROPROBE ANALYSIS OF LASER MELTING AND ETCHING IN SILICONJOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3492 - 3505TANG, HHERMAN, IP
- [2] MICROPROBE RAMAN ANALYSIS OF PICOSECOND LASER ANNEALED IMPLANTED SILICONAPPLIED PHYSICS LETTERS, 1983, 42 (06) : 504 - 506NISSIM, YISAPRIEL, JOUDAR, JL
- [3] POLARIZATION SENSITIVE RAMAN MICROPROBE STUDIES OF LOCAL CRYSTAL QUALITY IN LASER ANNEALED SILICONPROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 463 : 126 - 129HOPKINS, JBFARROW, LAFISANICK, GJ
- [4] RAMAN MICROPROBE ANALYSIS DURING THE DIRECT LASER WRITING OF SILICON MICROSTRUCTURESAPPLIED PHYSICS LETTERS, 1986, 48 (02) : 195 - 197MAGNOTTA, FHERMAN, IP
- [5] RAMAN MICROPROBE SCATTERING OF SOLID SILICON AND GERMANIUM AT THE MELTING TEMPERATUREPHYSICAL REVIEW B, 1991, 43 (03): : 2299 - 2304TANG, HHERMAN, IP
- [6] RAMAN MICROPROBE ANALYSIS OF TEMPERATURE PROFILES IN CW LASER HEATED SILICON MICROSTRUCTURESIEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (05) : 976 - 988PAZIONIS, GDTANG, HHERMAN, IP
- [7] Spatial resolutions and polarization analysis in Raman microprobe techniqueJpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 6 A (3463-3467):Toyama Univ, Toyama, Japan
- [8] Spatial resolutions and polarization analysis in Raman microprobe techniqueJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (6A): : 3463 - 3467Ishioka, T
- [9] EVALUATION OF THE CRYSTALLINITY OF LASER-ANNEALED POLYCRYSTALLINE SILICON-ON-SILICON STRUCTURES BY RAMAN-MICROPROBE POLARIZATION MEASUREMENTS.Journal of Applied Physics, 1984, 56 (10) : 2989 - 2992Nakashima, S.Inoue, Y.Mitsuishi, A.
- [10] DETERMINATION OF CRYSTALLOGRAPHIC ORIENTATIONS IN SILICON FILMS BY RAMAN-MICROPROBE POLARIZATION MEASUREMENTSJOURNAL OF APPLIED PHYSICS, 1989, 65 (07) : 2583 - 2590MIZOGUCHI, KNAKASHIMA, S
