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- [5] Growth of aluminum nitride on porous alumina and silica through separate saturated gas-solid reactions of trimethylaluminum and ammoniaCHEMISTRY OF MATERIALS, 2002, 14 (02) : 720 - 729Puurunen, RLRoot, ASarv, PViitanen, MMBrongersma, HHLindblad, MKrause, AOI
- [6] Influence of the nature of the (0001) alumina surface on thin film growthSurf Sci, 1-3 (183-195):Univ of Minnesota, Minneapolis, United States
- [7] Influence of the nature of the (0001) alumina surface on thin film growthSURFACE SCIENCE, 1997, 391 (1-3) : 183 - 195Bench, MWKotula, PGCarter, CB
- [8] Preparation and characteristics of nickel oxide thin film by controlled growth with sequential surface chemical reactionsJOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 15 (12) : 1081 - 1083Kumagai, HMatsumoto, MToyoda, KObara, M
- [9] Mechanisms of surface reactions in thin solid film chemical deposition processesCOORDINATION CHEMISTRY REVIEWS, 2013, 257 (23-24) : 3177 - 3191Zaera, Francisco
- [10] Chemical Composition of AlN Thin Films Deposited at 523-@723 K Using Dimethylethylamine Alane and AmmoniaChemistry of Materials, 10 (03):Kidder, J. N.Yun, H. K.Rogers, J. W.Pearsall, T. P.