ENERGY DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM ARSENIDE BY ARGON ION BOMBARDMENT.

被引：0

作者：

Bhattacharya, S.R. ^{[1
]}

Ghose, D. ^{[1
]}

Basu, D. ^{[1
]}

机构：

[1] Saha Inst of Nuclear Physics, Calcutta, India, Saha Inst of Nuclear Physics, Calcutta, India

来源：

Indian Journal of Pure and Applied Physics | 1987年 / 25卷 / 09期

关键词：

ARGON - ION BEAMS - SPUTTERING;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The sputtering yields of a GaAs single crystal with (100) orientation bombarded by 15-35 kev**4**0Ar** plus for normal incidence are determined. The yield values are compared with different modifications of P Sigmund's sputtering yield formula in the elastic collision region. The atomic surface binding energy of GaAs is estimated using the measured yield values. The results are compared with that of metallic alloy sputtering and the qualitative differences are noted.

引用

页码：328 / 330

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