Nanosecond risetime pulse characterization of SiC p+n junction diode breakdown and switching properties

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作者：
Neudeck, P.G. [1 ]
Fazi, C. [1 ]
机构：
[1] NASA Lewis Research Cent, Cleveland, United States
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 2期
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页码：1037 / 1040
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