Electrical characterization of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

被引：0
|
作者：
Lab de Physique de la Matiere , Villeurbanne, France [1 ]
机构：
来源：
Appl Surf Sci | / 212-216期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS
    DeBarros, O
    LeTron, B
    Woods, RC
    GiroultMatlakowski, G
    Vincent, G
    Bremond, G
    APPLIED SURFACE SCIENCE, 1996, 102 : 212 - 216
  • [2] Noise characterization for heterojunction bipolar transistors (HBTs)
    Liu, KW
    Anwar, AFM
    COMMAD 04: 2004 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 2005, : 129 - 132
  • [3] TEM STUDY OF STRAIN RELAXATION PROCESSES IN METASTABLE SI/SIGE/SI STRUCTURES FOR HETEROJUNCTION BIPOLAR-TRANSISTORS (HBTS)
    HOCKLY, M
    TUPPEN, CG
    GIBBINGS, CJ
    MARTIN, ASR
    SHAFI, ZA
    ASHBURN, P
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 445 - 448
  • [4] Development on SiGe/Si film heterojunction bipolar transistors
    Guo, L
    Li, KC
    Liu, DG
    Zhang, J
    Yi, Q
    d'Avitaya, FA
    Xu, SL
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 236 - 239
  • [5] Reliability of microwave SiGe/Si heterojunction bipolar transistors
    Ma, ZQ
    Bhattacharya, P
    Rieh, JS
    Ponchak, GE
    Alterovitz, SA
    Croke, ET
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2001, 11 (10) : 401 - 403
  • [6] Characterization of Si/SiGe heterojunction bipolar transistors by deep level transient spectroscopy
    DeBarros, O
    Souifi, A
    LeTron, B
    Vincent, G
    Bremond, G
    THIN SOLID FILMS, 1997, 294 (1-2) : 271 - 273
  • [7] Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors
    Knoll, D
    Heinemann, B
    Bolze, D
    Ehwald, KE
    Fischer, G
    Kruger, D
    Morgenstern, T
    Naumann, E
    Schley, P
    Tillack, B
    Wolansky, D
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (09) : 1022 - 1026
  • [8] NOISE CHARACTERIZATION OF SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS AT MICROWAVE-FREQUENCIES
    SCHUMACHER, H
    ERBEN, U
    GRUHLE, A
    ELECTRONICS LETTERS, 1992, 28 (12) : 1167 - 1168
  • [9] Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors
    D. Knoll
    B. Heinemann
    D. Bolze
    K. E. Ehwald
    G. Fischer
    D. Krüger
    T. Morgenstern
    E. Naumann
    P. Schley
    B. Tillack
    D. Wolansky
    Journal of Electronic Materials, 1998, 27 : 1022 - 1026
  • [10] Empirical global modelling of Si/SiGe heterojunction bipolar transistors
    Taher, H.
    IET MICROWAVES ANTENNAS & PROPAGATION, 2008, 2 (04) : 401 - 408
12345