Resonant tunneling spectroscopy of sidewall-confined states and impurity-bound states using AlGaAs-GaAs triple-barrier diodes

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作者：
Nomoto, Kazumasa [1 ]
Suzuki, Toshi-kazu [1 ]
Taira, Kenichi [1 ]
Hase, Ichiro [1 ]
机构：
[1] Sony Corp Research Cent, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 8 B期
关键词：
Semiconductor diodes;
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