RHEED patterns and surface morphology of ZnSe homoepitaxial films grown by MBE

被引：0

作者：

Menda, Kazunori ^{[1
]}

Minato, Tesuo ^{[1
]}

Kawashima, Mitsuo ^{[1
]}

机构：

[1] Sumitomo Metal Mining Co Ltd, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1989年 / 28卷 / 09期

关键词：

Crystals--Epitaxial Growth - Electrons--Diffraction - Molecular Beam Epitaxy - Semiconducting Films--Growth - Surfaces--Morphology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Homoepitaxial films of ZnSe have been grown on (001)ZnSe substrates by molecular-beam epitaxy(MBE). These films were grown at a constant substrate temperature of 360°C. The Zn-beam pressure (PZn) was fixed, while the Se-beam pressure (PSe) was varied. The surfaces during the growth were observed by reflection high-energy electron diffraction (RHEED). The grown film observed with a scanning electron microscope showed the smoothest surface for PSe/PZn = 1.1, which makes the surface a c(2 × 2) surface structure. This suggests that the surface stoichiometry condition does not necessarily provide a smooth surface.

引用

页码：1560 / 1563

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