Suppression of lateral autodoping from arsenic buried layer by selective epitaxy capping

被引：0

作者：

Chiu, Tzu-Yin ^{[1
]}

Lee, Kwing F. ^{[1
]}

Lau, Maureen Y. ^{[1
]}

Finegan, Sean N. ^{[1
]}

Morris, Mark D. ^{[1
]}

Voshchenkov, Alexander M. ^{[1
]}

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA

来源：

| 1600年 / 11期

关键词：

Lateral Autodoping - Selective Epitaxy Capping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 18 条

[1] SUPPRESSION OF LATERAL AUTODOPING FROM ARSENIC BURIED LAYER BY SELECTIVE EPITAXY CAPPING
CHIU, TY
LEE, KF
LAU, MY
FINEGAN, SN
MORRIS, MD
VOSHCHENKOV, AM
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (03) : 123 - 125
[2] REDUCTION OF AUTODOPING FROM ARSENIC BURIED LAYERS
YGARTUA, C
SWAROOP, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C329 - C329
[3] COUPLED ON OFF-BURIED LAYER MODELING OF GROWTH-RATE DEPENDENCE OF ARSENIC AUTODOPING PROFILES IN SILICON
MURLEY, PC
SRINIVASAN, GR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C328 - C328
[4] COUPLED ON OFF-BURIED LAYER MODELING OF GROWTH-RATE DEPENDENCE OF ARSENIC AUTODOPING PROFILES IN SILICON
MURLEY, PC
SRINIVASAN, GR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) : 2010 - 2014
[5] SUPPRESSION OF ARSENIC AUTODOPING WITH RAPID THERMAL EPITAXY FOR LOW-POWER BIPOLAR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR
KING, CA
JOHNSON, RW
CHIU, TY
SUNG, JM
MORRIS, MD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (07) : 2430 - 2434
[6] Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy
J Vac Sci Technol B, 3 (2229):
[7] Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy
Hobart, KD
Kub, FJ
Jemigan, GG
Thompson, PE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2229 - 2232
[8] Suppression of indium vaporization from GaN/GaInN superlattice by BP capping layer
Odawara, M
Yamatake, K
Yamashita, T
Udagawa, T
JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 645 - 647
[9] EFFECTS OF THIN SIO2 CAPPING LAYER ON SILICON-ON-INSULATOR FORMATION BY LATERAL SOLID-PHASE EPITAXY
KUSUKAWA, K
OHKURA, M
MONIWA, M
MIYAO, M
APPLIED PHYSICS LETTERS, 1992, 60 (01) : 80 - 81
[10] A BURIED-COLLECTOR LAYER BY ARSENIC DIFFUSION FROM AN OXIDIZED ARSENIC-IMPLANTED AMORPHOUS-SILICON
TSUNODA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1926 - L1928

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