DISORDER, FLUCTUATIONS AND ELECTRON INTERACTIONS IN DOPED SEMICONDUCTORS: A MULTIPLE-SCATTERING APPROACH.

被引：0

作者：

Ghazali, A. ^{[1
]}

Serre, J. ^{[1
]}

机构：

[1] Univ de Paris 7, Groupe de Physique, des Solides, Paris, Fr, Univ de Paris 7, Groupe de Physique des Solides, Paris, Fr

来源：

Solid-State Electronics | 1984年 / 28卷 / 1-2期

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摘要：

SEMICONDUCTOR MATERIALS

引用

页码：145 / 149

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[1] DISORDER, FLUCTUATIONS AND ELECTRON INTERACTIONS IN DOPED SEMICONDUCTORS - A MULTIPLE-SCATTERING APPROACH
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