Lead-strontium -telluride films lasers prepared by hot-wall epitaxy

被引：0
|
作者：
机构：
[1] Sakurai, Nobuhiro
[2] Fujiyasu, Hiroshi
[3] Ishida, Akihiro
来源：
Sakurai, Nobuhiro | 1600年 / Publ by JJAP, Minato-ku, Japan卷 / 33期
关键词：
Optical communication equipment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] LEAD-STRONTIUM-TELLURIDE FILMS AND LASERS PREPARED BY HOT-WALL EPITAXY
    SAKURAI, N
    FUJIYASU, H
    ISHIDA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 151 - 154
  • [2] PBSRS LASERS PREPARED BY HOT-WALL EPITAXY
    ISHIDA, A
    TAKASHIBA, H
    IZUTU, T
    FUJIYASU, H
    BOTTNER, H
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 619 - 620
  • [3] GaN films prepared by hot-wall epitaxy
    Yamamoto, E
    Ishiro, K
    Ohta, M
    Kuwabara, M
    Sakakibara, S
    Ishida, A
    Fujiyasu, H
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 215 - 220
  • [4] PBMGSRTE AND PBSRTESE FILMS PREPARED BY HOT-WALL EPITAXY
    SAKURAI, N
    MATSUSHITA, K
    FUJIYASU, H
    ISHIDA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12A): : 6486 - 6490
  • [5] TEM ANALYSIS OF LEAD-TELLURIDE FILMS GROWN BY HOT-WALL EPITAXY ON KCL AND BAF2
    PONGRATZ, P
    SITTER, H
    JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) : 73 - 78
  • [6] PbCaTe films and PbCaTe/PbTe superlattices prepared by hot-wall epitaxy
    Ishida, A
    Tsuchiya, T
    Yoshioka, N
    Ishino, K
    Fujiyasu, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (08): : 4652 - 4655
  • [7] PbCaTe films and PbCaTe/PbTe superlattices prepared by hot-wall epitaxy
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 8 (4652-4655):
  • [8] GROWTH OF GAN FILMS BY HOT-WALL EPITAXY
    ISHIDA, A
    YAMAMOTO, E
    ISHINO, K
    ITO, K
    FUJIYASU, H
    NAKANISHI, Y
    APPLIED PHYSICS LETTERS, 1995, 67 (05) : 665 - 666
  • [9] PROPERTIES OF PB1-XEUXTE FILMS PREPARED BY HOT-WALL EPITAXY
    ISHIDA, A
    MATSUURA, S
    MIZUNO, M
    SASE, Y
    FUJIYASU, H
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4572 - 4574
  • [10] Growth and energy band gap of CaSeS thin films prepared by hot-wall epitaxy
    Abe, Seishi
    Masumoto, Katashi
    JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) : 394 - 397
12345