MODEL OF DIELECTRIC BREAKDOWN IN DISORDERED MEDIA.

被引：0
|
作者：
Benguigui, L. [1 ]
机构：
[1] Technion, Haifa, Isr, Technion, Haifa, Isr
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1987年 / 56卷 / 06期
关键词：
ELECTRIC BREAKDOWN - Mathematical Models - SEMICONDUCTOR DIODES; LIGHT EMITTING - Applications;
D O I：
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中图分类号：
学科分类号：
摘要：
We present an experimental realization of dielectric breakdown in disordered media by means of a random network made of resistors (concentration p) and diodes (concentration 1-p). The diodes are considered as elements which become conductors for a voltage greater than a specific value. Near the percolation threshold we find that the critical exponent of the breakdown voltage is greater than that of the correlation length. Using light-emitting diodes, we can display the breakdown paths and determine their properties.
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页码：771 / 774
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