Preparation of BaTiO3 films by CVD

被引：5
|
作者：
Nakazawa, Hidenobu [1 ]
Yamane, Hisanori [1 ]
Hirai, Toshio [1 ]
机构：
[1] Tohoku Univ, Sendai, Japan
来源：
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan | 1991年 / 99卷 / 1150期
关键词：
Films - Chemical Vapor Deposition - Microscopic Examination - Scanning Electron Microscopy;
D O I：
10.2109/jcersj.99.527
中图分类号：
学科分类号：
摘要：
Thin films of BaTiO3 were prepared by CVD using barium β-diketonate chelate {Ba(C11H19O2)2} and titanium tetra-isopropoxide {Ti[OCH(CH3)2]4} as precursors. BaTiO3 films deposited from 700° to 1000°C on MgO (100) substrates showed prominent a-axis orientation. X-ray pole figure measurement by Schulz's reflected method indicated that the CVD-BaTiO3 films deposited from 900° to 1000°C grew epitaxially on MgO (100) substrates. SEM observation showed that rectangular grains aligned two dimensionally in the plane of the films deposited at 1000°C.
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页码：527 / 529
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