Interface science, its impact on modern semiconductor technology and device physics

被引：0

作者：

Lüth, H. ^{[1
]}

机构：

[1] Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany

来源：

Physica Status Solidi (A) Applied Research | 1999年 / 173卷 / 01期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：5 / 14

共 50 条

[1] Interface science, its impact on modern semiconductor technology and device physics
Lüth, H
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 173 (01): : 5 - 14
[2] MODERN PHYSICS BRINGS SEMICONDUCTOR TECHNOLOGY TO A TURNING POINT
LASSUS, M
FOUNAUD, JP
[J]. MICROELECTRONICS AND RELIABILITY, 1977, 16 (04): : 367 - 387
[3] GaN - "High Pressure Semiconductor" in Modern Physics and Technology
Grzegory, I.
Porowski, S.
[J]. POLISH JOURNAL OF CHEMISTRY, 2008, 82 (10) : 1869 - 1890
[4] MODEL OF CYCLE SCIENCE-TECHNOLOGY-PRODUCTION AND ITS APPLICATION TO DEVELOPMENT OF SEMICONDUCTOR PHYSICS AND INDUSTRY
ALBRECHT, E
KANT, H
[J]. R & D MANAGEMENT, 1978, 8 : 119 - 125
[5] JOURNAL-OF-PHYSICS-C - SOLID-STATE PHYSICS AND SEMICONDUCTOR SCIENCE AND TECHNOLOGY
STONEHAM, AM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (32): : 1023 - 1023
[6] The Impact of Science and Technology on Modern European Society
Vodopianova, E. V.
[J]. CONTEMPORARY EUROPE-SOVREMENNAYA EVROPA, 2022, (05): : 107 - 118
[7] SEMICONDUCTOR SURFACE DEVICE PHYSICS
ZEMEL, JN
[J]. SENSORS AND ACTUATORS, 1981, 1 (01): : 31 - 75
[8] The progress and impact of semiconductor device and processing technology innovation in Japan
Sugano, T
[J]. PROCEEDINGS OF THE IEEE, 1998, 86 (01) : 138 - 149
[9] Physics and technology of semiconductor nanostructures
Luth, H
[J]. HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 1 - 10
[10] EPITAXY - ITS ROLE IN COMPOUND SEMICONDUCTOR-DEVICE TECHNOLOGY
WOODALL, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 730 - 731

← 1 2 3 4 5 →