Generation-recombination noise in doped-channel Al0.3Ga 0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices

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[1] Kunets, V.P.
[2] Müller, U.
[3] Dobbert, J.
[4] Pomraenke, R.
[5] Tarasov, G.G.
[6] Masselink, W.T.
[7] Kostial, H.
[8] Kissel, H.
[9] Mazur, Yu.I.
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Masselink, W.T. (massel@physik.hu-berlin.de) | 1600年 / American Institute of Physics Inc.卷 / 94期
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