Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering

被引：0
|
作者：
Colder, H. [1 ]
Rizk, R. [1 ]
Morales, M. [1 ]
Marie, P. [1 ]
Vicens, J. [1 ]
Vickridge, I. [2 ]
机构：
[1] Structure des Interfaces et Fonctionnalité des Couches Minces (SIFCOM), Unité Mixte de Recherche (UMR) 6176, Ecole Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), 6 Boulevard Maŕchal Juin, 14050 Caen, France
[2] Système d'Analyse par Faisceau d'Ions Rapides (SAFIR), GPS, Campus Boucicaut, 140, Rue de Lourmel, 75015 Paris, France
来源：
Journal of Applied Physics | 2005年 / 98卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering
    Colder, H
    Rizk, R
    Morales, M
    Marie, P
    Vicens, J
    Vickridge, I
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (02)
  • [2] Influence of hydrogen dilution and substrate temperature on growth of nanocrystalline hydrogenated silicon carbide films deposited by RF sputtering
    Madani, M.
    Colder, H.
    Portier, X.
    Zellama, K.
    Rizk, R.
    Bouchriha, H.
    MICROELECTRONICS JOURNAL, 2006, 37 (10) : 1031 - 1035
  • [3] Reactive magnetron sputtering of germanium carbide films at different substrate temperature
    胡超权
    王艳辉
    郭龙飞
    郑伟涛
    Journal of Harbin Institute of Technology(New series), 2010, (03) : 427 - 430
  • [4] Reactive magnetron sputtering of germanium carbide films at different substrate temperature
    Hu, Chao-Quan
    Wang, Yan-Hui
    Guo, Long-Fei
    Zheng, Wei-Tao
    Journal of Harbin Institute of Technology (New Series), 2010, 17 (03) : 427 - 430
  • [5] Low temperature nanocrystallization of silicon carbide by hydrogen reactive magnetron sputtering
    Kerdiles, S
    Rizk, R
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2002, 82 (03): : 601 - 614
  • [6] Influence of Substrate Temperature on Microstructure of Zirconium Silicon Nitride Thin Films Deposited by Reactive Magnetron Sputtering
    Oliveira, F. S.
    Dias, I. L.
    Araujo, P. L. L.
    Ramirez, D. A.
    Neto, P. C. Silva
    Hubler, R.
    Mendes, F. M. T.
    Damasceno, I. Z.
    Tentardini, E. K.
    MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2023, 26
  • [7] Relaxing layers of silicon carbide grown on a silicon substrate by magnetron sputtering
    Sh. M. Ramazanov
    G. M. Ramazanov
    Technical Physics Letters, 2014, 40 : 44 - 47
  • [8] Relaxing layers of silicon carbide grown on a silicon substrate by magnetron sputtering
    Ramazanov, Sh. M.
    Ramazanov, G. M.
    TECHNICAL PHYSICS LETTERS, 2014, 40 (01) : 44 - 47
  • [9] Nanocrystalline titanium carbide thin films deposited by reactive magnetron sputtering
    Musil, J
    Hovorka, D
    Misina, M
    Bell, AJ
    Studnicka, V
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1998, 48 (08) : 963 - 971
  • [10] Cubic silicon carbide films grown by reactive magnetron sputtering at relatively low temperature
    Kerdiles, S
    Gourbilleau, F
    Rizk, R
    Pérez-Rodríguez, A
    Garrido, B
    González-Varona, O
    Calvo-Barrio, L
    Morante, JR
    SOLID STATE PHENOMENA, 1999, 67-8 : 477 - 482
12345