Electrical characteristics of high energy 120Sn implantation in p-type GaAs

被引：0
|
作者：
Department of Physics, College of Education, Mukalla, Yemen [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
机构：
来源：
Nucl Instrum Methods Phys Res Sect B | / 1卷 / 78-83期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Electrical characteristics of high energy 120Sn implantation in p-type GaAs
    Ali, YP
    Narsale, AM
    Arora, BM
    Gokhale, MR
    Kanjilal, D
    Salvi, VP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 156 (1-4): : 78 - 83
  • [2] Electrical behaviour of high energy 120Sn implantation in n- and p-type GaAs
    Narsale, AM
    Ali, YP
    Arora, BM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 421 - 425
  • [3] Electrical characteristics of high-energy 120Sn implantation in n+GaAs
    Sukhatankar, KV
    Belekar, MM
    Narsale, AM
    Nair, G
    Arora, BM
    RADIATION MEASUREMENTS, 2003, 36 (1-6) : 685 - 688
  • [4] Optical and electrical characteristics of GaAs implanted with high energy (70 MeV) 120Sn ions
    Univ of Mumbai, Mumbai, India
    Vacuum, 12 (961-964):
  • [5] Optical and electrical characteristics of GaAs implanted with high energy (70 MeV) 120Sn ions
    Narsale, AM
    Salvi, VP
    Arora, BM
    Ali, YP
    Bhambhani, U
    Damle, A
    Kanjilal, D
    VACUUM, 1997, 48 (12) : 961 - 964
  • [6] Electrical characteristics of GaAs implanted with 70 MeV 120Sn ions
    Ali, Yousuf Pyar
    Narsale, A.M.
    Bhambhani, Uma
    Damle, Arun
    Salvi, V.P.
    Arora, B.M.
    Shah, A.P.
    Kanjilal, D.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996, 117 (1-2): : 129 - 133
  • [7] Annealing behaviour of high energy 120Sn implanted GaAs
    Ali, YP
    Salvi, VP
    Narsale, AM
    Arora, BM
    Kanjilal, D
    Mehta, GK
    SOLID STATE PHENOMENA, 1997, 55 : 98 - 100
  • [8] High temperature annealing in high energy 120Sn implanted GaAs
    Ali, YP
    Narsale, AM
    Arora, BM
    Lokhre, SG
    Salvi, VP
    Kanjilal, D
    Mehta, GK
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 285 - 288
  • [9] Electrical properties of high energy Sn-120 implantation in GaAs
    Narsale, A
    Ali, YP
    Bhambhani, U
    Salvi, VP
    Arora, BM
    Kanjilal, D
    Mehta, GK
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4228 - 4231
  • [10] P-TYPE DOPING OF GAAS BY CARBON IMPLANTATION
    JIANG, H
    ELLIMAN, RG
    WILLIAMS, JS
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (04) : 391 - 396
12345