Crystalline-amorphous contrast formation in thermally crystallized SiC

被引：0

作者：

Ruttensperger, B. ^{[1
]}

Krotz, G. ^{[1
]}

Mueller, G. ^{[1
]}

Derst, G. ^{[1
]}

Kalbitzer, S. ^{[1
]}

机构：

[1] Technical Univ of Munich, Garching, Germany

来源：

Journal of Non-Crystalline Solids | 1991年 / 137-38卷 / pt 1期

关键词：

Optical Variables Measurement - Semiconducting Films - Optical Properties - Semiconducting Glass - Crystallization - Silicon Carbide - Crystallization;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The crystallization of stoichiometric amorphous (a-) SiC:H films, deposited onto crystalline (c-) Si and highly transparent sapphire substrates, has been investigated. After annealing transparent poly-crystalline material is obtained due to an emerging indirect band gap. Irradiation of the crystallized films with energetic Ar+ ions transforms the films into a heavily absorbing amorphous state. Possible applications of this effect with regard to sub-micron lithography and to high-density optical storage are pointed out.

引用

页码：635 / 638

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