HISTORICAL REVIEW OF HIGH QUALITY PROCESS.

被引：0

作者：

Nishizawa, Jun-ichi ^{[1
]}

Ohmi, Tadahiro ^{[1
]}

机构：

[1] Semiconductor Research Inst, Sendai, Jpn, Semiconductor Research Inst, Sendai, Jpn

来源：

Denshi Tokyo | 1983年 / 22期

关键词：

SEMICONDUCTOR DEVICES - Processing - SEMICONDUCTOR MATERIALS - Processing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Process temperature lowering is required for the future development of device miniaturizations in the VLSI fields in order to realize a strictly designed impurity profile in the devices. Various early processes are discussed, including crystal growth due to the field enhanced segregation method and the perfect crystal technology due to impurity compensation having different ion radius.

引用

页码：101 / 105

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