Chapter 6 Metal-Silicon Reactions and Silicide Formation

被引：0
|
作者：
Shibata, T. [1 ]
Wakit, A. [1 ]
Sigmon, T.W. [1 ]
Gibbons, James F. [1 ]
机构：
[1] Stanford Electronics Laboratories Stanford University Stanford, CA, United States
来源：
Semiconductors and Semimetals | 1984年 / 17卷 / 0C期
关键词：
D O I：
10.1016/S0080-8784(08)60184-2
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：341 / 395
相关论文
共 50 条
  • [1] SILICIDE FORMATION BY METAL-SILICON INTERACTIONS
    TU, KN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C78 - C78
  • [2] A KINETIC-MODEL FOR SILICIDE FORMATION THROUGH THIN-FILM METAL-SILICON REACTIONS
    LIN, Z
    IVEY, DG
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4314 - 4328
  • [3] CRITERION FOR SILICIDE FORMATION IN TRANSITION METAL-SILICON DIFFUSION COUPLES
    ZHANG, L
    IVEY, DG
    CANADIAN METALLURGICAL QUARTERLY, 1995, 34 (01) : 51 - 71
  • [4] METAL SILICON REACTIONS AND SILICIDE FORMATION
    SHIBATA, T
    WAKITA, A
    SIGMON, TW
    GIBBONS, JF
    SEMICONDUCTORS AND SEMIMETALS, 1984, 17 : 341 - 395
  • [5] METAL-SILICON REACTIONS
    TU, KN
    JOURNAL OF METALS, 1988, 40 (11): : 44 - 44
  • [6] 2-STAGE PROCESS FOR SILICIDE FORMATION AT METAL-SILICON INTERFACES
    NEMANICH, RJ
    STAFFORD, BL
    JACKSON, WB
    THOMPSON, MJ
    ABELSON, JR
    SIGMON, TW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 588 - 588
  • [7] CELLULAR STRUCTURE AND SILICIDE FORMATION IN LASER-IRRADIATED METAL-SILICON SYSTEMS
    VANGURP, GJ
    EGGERMONT, GEJ
    TAMMINGA, Y
    STACY, WT
    GIJSBERS, JRM
    APPLIED PHYSICS LETTERS, 1979, 35 (03) : 273 - 275
  • [8] AMORPHOUS SILICIDE FORMATION BY THERMAL-REACTION - A COMPARISON OF SEVERAL METAL-SILICON SYSTEMS
    HOLLOWAY, K
    SINCLAIR, R
    NATHAN, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1479 - 1483
  • [9] EFFECT OF ION-IRRADIATION ON SILICIDE FORMATION IN METAL-SILICON SYSTEM WITH INTERFACIAL SILICON DIOXIDE LAYER
    HORINO, Y
    MATSUNAMI, N
    ITOH, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1218 - 1223
  • [10] EFFECT OF ION-IRRADIATION ON SILICIDE FORMATION IN METAL-SILICON SYSTEM WITH INTERFACIAL SILICON DIOXIDE LAYER.
    Horino, Yuji
    Matsunami, Noriaki
    Itoh, Noriaki
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (09): : 1218 - 1223
12345