Optical properties of an InGaN active layer in ultraviolet light emitting diode

被引：0

作者：

Deguchi, Takahiro ^{[1
]}

Torii, Kosuke ^{[1
]}

Shimada, Kazuhiro ^{[1
]}

Sota, Takayuki ^{[5
]}

Matsuo, Ryuji ^{[2
]}

Sugiyama, Mutsumi ^{[3
,6
]}

Setoguchi, Akiko ^{[3
,6
]}

Chichibu, Shigefusa ^{[3
]}

Nakamura, Shuji ^{[4
]}

机构：

[1] Dept. Elec., Electronics, Comp. Eng., Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan

[2] X-Ray Research Laboratory, Rigaku Corporation, 3-9-1 Matsubara, Akishima, Tokyo 196-8666, Japan

[3] Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

[4] Dept. of Research and Development, Nichia Chemical Industries Ltd., Kaminaka, Anan, Tokushima 744-8601, Japan

[5] Mat. Reserch Lab. Biosci. Photonics, Grad. Sch. of Sci. and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

[6] Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1999年 / 38卷 / 9 A/B期

关键词：

Experimental; (EXP);

D O I：

10.1143/jjap.38.l975

中图分类号：

学科分类号：

摘要：

Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

引用

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