Reliability of a focused ion beam repair on digital CMOS circuits

被引：0
|
作者：
Alcatel Telecom Antwerp, Antwerp, Belgium [1 ]
机构：
来源：
Microelectronics Reliability | 1996年 / 36卷 / 11-12期
关键词：
CMOS integrated circuits - Electromigration - Integrated circuit layout - Ion beam lithography;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The usefulness of FIB technology for device modification is commonly recognized in the industry. Yet, very little is known concerning the reliability of these circuit changes. This paper presents the reliability assessment of a `standard' FIB repair on digital CMOS circuits. The overall conclusion is positive: the lifetime of a `standard' FIB repair is found to be more than a few months, which is largely sufficient for prototyping.
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页码：1787 / 1790
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