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- [4] Fowler-Nordheim current oscillations analysis of metal/ultra-thin oxide/semiconductor structures PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 182 (02): : 737 - 753
- [6] Estimate of width of transition region of barrier for thin film insulator MOS structure using fowler-Nordheim tunneling current Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (02): : 228 - 233
- [10] Effect of the series resistance on the Fowler-Nordheim tunneling characteristics of ultra-thin gate oxides 2005 Spanish Conference on Electron Devices, Proceedings, 2005, : 41 - 44