Resistance random access memory switching mechanism

被引：0
|
作者：
Hsu, Sheng T. [1 ]
Li, Tingkai [1 ]
Awaya, Nobuyoshi [2 ]
机构：
[1] Sharp Laboratories of America, 5700 NW Pacific Rim Boulevard, Camas, WA 98607, United States
[2] ATDL, ECDDG, Sharp Corporation, 1 Asahi, Daimon-Cho, Fukuyama, Hiroshima 721-8522, Japan
来源：
Journal of Applied Physics | 2007年 / 101卷 / 02期
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