Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on m-plane sapphire by metalorganic vapor phase epitaxy

被引：0
|
作者：
Vennéguès, Philippe [1 ]
Bougrioua, Zahia [1 ,2 ]
Guehne, Tobias [1 ]
机构：
[1] Centre de Recherche sur l'Hétéro-Epitaxie et Ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
[2] IEMN, CNRS, Lille University, 59652 Villeneuve d'Ascq, France
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 7 A期
关键词：
Gallium nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：4089 / 4095
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