Anisotropy of crystal growth mechanisms, dielectricity, and magnetism of multiferroic Bi2FeMnO6 thin films

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[1] Liu, P.
[2] Cheng, Z.X.
[3] Du, Y.
[4] Feng, L.Y.
[5] Fang, H.
[6] Wang, X.L.
[7] Dou, S.X.
来源：
Cheng, Z.X. (cheng@uow.edu.au) | 1600年 / American Institute of Physics Inc.卷 / 113期
关键词：
Epitaxial Bi2FeMnO6 (BFMO) thin films deposited on various Nb:SrTiO3 substrates show that the lattice parameters are very sensitive to epitaxial strains. Compressive and tensile strains are induced to the in-plane lattice constants of the (100) and (111) oriented films; respectively; while that of the (110) oriented thin film stay unstrained. The thin films also exhibit a strongly anisotropic growth habit depending on the substrate. Spiral growth; such as in the (100) BFMO film; is unique in samples prepared by pulsed laser deposition. Extrinsic dielectric constants at low frequencies are attributed to oxygen vacancies via the Maxwell-Wagner effect. All the samples show saturated hysteresis loops with very small coercive fields at 200 K; indicating the presence of weak ferromagnetism. © 2013 American Institute of Physics;
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