Contactless electroreflectance of InAs In0.53 Ga0.23 Al0.24 As quantum dashes grown on InP substrate: Analysis of the wetting layer transition

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作者：
Kudrawiec, R. [1 ,4 ]
Motyka, M. [1 ]
Misiewicz, J. [1 ]
Somers, A. [2 ]
Schwertberger, R. [2 ]
Reithmaier, J.P. [2 ]
Forchel, A. [2 ]
Sauerwald, A. [3 ]
Kümmell, T. [3 ]
Bacher, G. [3 ]
机构：
[1] Institute of Physics, Wrocaw University of Technology, Wybrzee Wyspiańskiego 27, 50-370 Wrocaw, Poland
[2] Technische Physik, Universität Würzburg, A7m Hubland, D-97074 Würzburg, Germany
[3] Werkstoffe der Elektrotechnik, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
[4] Technische Physik, Institute of Nanostructure Technology and Analytics, University of Kassel, Heinrich Plett-Str. 40, D-34132 Kassel, Germany
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| 1600年 / American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States卷 / 101期
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