Development and predistortion of 3.5 GHz WiMAX RF power amplifier

被引：0
|
作者：
Zhang L. [1 ]
Hong W. [1 ]
Zhou J. [1 ]
Zhai J. [1 ]
机构：
[1] State Key Laboratory of Millimeter Waves, Southeast University
来源：
Dongnan Daxue Xuebao (Ziran Kexue Ban)/Journal of Southeast University (Natural Science Edition) | 2010年 / 40卷 / 06期
关键词：
Behavioral model; Load-pull; Predistortion; RF power amplifier; WiMAX;
D O I：
10.3969/j.issn.1001-0505.2010.06.001
中图分类号：
学科分类号：
摘要：
A 10 W-peak 3.5 GHz LDMOS (lateral diffused MOSFET) power amplifier is designed according to the 802.16e WiMAX specification. The load-pull technique is used in decision of the best input/output impedances of the power transistor. The simulated values are in agreement with the experimental results. A method based on memory effect minimization and indirect learning is proposed and applied successfully to the behavioral modeling and digital predistortion of the implemented power amplifier. The workbench of multi-carrier signal generation and collection is also constructed. The experimental results show that a specification of -47.5 dBc, with an improvement of 14 dB, can be achieved for the power amplifier characterized by a Hammerstein model with only seven coefficients, driven by three-carrier W-CDMA wideband signal with an average output power of 30 dBm. Compared with conventional digital predistortion technique, the computational complexity can be reduced while high performance is maintained when the proposed method is adopted, which shows its promising application.
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页码：1129 / 1133
页数：4
相关论文
共 11 条
  • [1] Chakchai S.-I., Jain R., Tamimi A.K., Scheduling in IEEE 802.16e mobile WiMAX networks: Key issues and a survey, IEEE Journal on Selected Areas in Communications, 27, 2, pp. 156-171, (2009)
  • [2] Xiao H., Zhang L., Huang R., Et al., A novel RF LDMOS fabricated with standard foundry technology, Electron Device Letters, 30, 4, pp. 386-388, (2009)
  • [3] Nemati H., Fager C., Thorsell M., Et al., High-efficiency LDMOS power-amplifier design at 1 GHz using an optimized transistor model, IEEE Transactions on Microwave Theory and Techniques, 57, 7, pp. 1647-1654, (2009)
  • [4] Pedro J.C., A comparative overview of microwave and wireless power-amplifier behavioral modeling approaches, IEEE Transactions on Microwave Theory and Techniques, 53, 4, pp. 1150-1163, (2005)
  • [5] Zhu A., Pedro J.C., Brazil T.J., Dynamic deviation reduction-based Volterra behavioral modeling of RF power amplifiers, IEEE Transactions on Microwave Theory and Techniques, 54, 12, pp. 4323-4332, (2006)
  • [6] Morgan D.R., Ma Z.X., Kim J., Et al., A generalized memory polynomial model for digital predistortion of RF power amplifiers, IEEE Transactions on Microwave Theory and Techniques, 54, 10, pp. 3852-3860, (2006)
  • [7] Mirri D., Luculano G., Filicori F., Et al., A modified Volterra series approach for nonlinear dynamic systems modeling, IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 49, 8, pp. 1118-1128, (2002)
  • [8] Ding L., Zhou G.T., Morgan D.R., Et al., A robust digital baseband predistorter constructed using memory polynomials, IEEE Transactions on Communications, 52, 1, pp. 159-165, (2004)
  • [9] Hong S., Woo Y.Y., Kin J., Et al., Weighted polynomial digital predistortion for low memory effect Doherty power amplifier, IEEE Transactions on Microwave Theory and Techniques, 55, 5, pp. 925-931, (2007)
  • [10] Khanifar A., Maslennikov N., Vassilakis B., Bias circuit topologies for minimization of RF amplifier memory effects, European Microwave Conference, pp. 1349-1352, (2003)
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