Photo-thermal ionization spectroscopy of shallow acceptors in high purity germanium

被引:0
|
作者
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China [1 ]
不详 [2 ]
机构
来源
Wuli Xuebao | 2008年 / 2卷 / 1097-1101期
关键词
16;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Photo-thermal ionization spectroscopy of shallow acceptors in high purity germanium
    Yu Chen-Hui
    Zhang Bo
    Yu Li-Bo
    Li Ya-Jun
    Lu Wei
    Shen Xue-Chu
    ACTA PHYSICA SINICA, 2008, 57 (02) : 1097 - 1101
  • [3] Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy
    Yu, Chen-Hui
    Zhang, Bo
    Yu, Li-Bo
    Li, Ya-Jun
    Lu, Wei
    Shen, Xue-Chu
    Wuli Xuebao/Acta Physica Sinica, 2008, 57 (02): : 1102 - 1108
  • [4] Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy
    Yu Chen-Hui
    Zhang Bo
    Yu Li-Bo
    Li Ya-Jun
    Lu Wei
    Shen Xue-Chu
    ACTA PHYSICA SINICA, 2008, 57 (02) : 1102 - 1108
  • [5] PHOTO-THERMAL IONIZATION IN A COPPER-DOPED GERMANIUM DETECTOR
    BUTLER, NR
    FISHER, P
    PHYSICS LETTERS A, 1974, A 47 (05) : 391 - 392
  • [6] PHOTO-IONIZATION OF SHALLOW ACCEPTORS IN GE
    WEIMER, MB
    SMITH, DL
    SOLID STATE COMMUNICATIONS, 1980, 36 (09) : 761 - 764
  • [7] Investigation of hydrogenated CVD diamond films by photo-thermal ionization spectroscopy
    Hikavyy, A.
    Clauws, P.
    Deferme, W.
    Bogdan, G.
    Haenen, K.
    Nesladek, M.
    DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) : 682 - 686
  • [8] PHOTOTHERMAL IONIZATION SPECTROSCOPY OF DONORS IN HIGH-PURITY GERMANIUM
    DARKEN, LS
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1118 - 1125
  • [9] PHOTO-THERMAL EXCITATIONS OF COPPER IMPURITIES IN GERMANIUM
    BUTLER, NR
    FISHER, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (01): : 92 - 92
  • [10] Photo-thermal deflection spectroscopy in semiconductors
    Narasimhan, KL
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 1117 - 1119