Optical properties of a Si delta-doped InGaNGaN quantum well with ultraviolet emission

被引：0
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作者：
Kwon, Min-Ki [1 ]
Park, Il-Kyu [1 ]
Kim, Ja-Yeon [1 ]
Kim, Jeom-Oh [1 ,3 ]
Seo, Seong-Bum [1 ,4 ]
Park, Seong-Ju [1 ]
Min, Kyeongik [2 ]
Park, Gil-Han [2 ]
机构：
[1] Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of
[2] Samsung Electro-Mechanics Company, Ltd., Suwon 443-743, Korea, Republic of
[3] Samsung Electronics Company, Ltd., 200, Asan, Chungnam-Do 336-841, Korea, Republic of
[4] Samsung Electro-Mechanics Company, Ltd., Suwon, Gyeonggi-Do 443-743, Korea, Republic of
来源：
Journal of Applied Physics | 2007年 / 102卷 / 07期
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