Negative-bias photodegradation mechanism in InGaZnO TFT

被引:5
|
作者
机构
[1] Tsubuku, Masashi
[2] Watanabe, Ryosuke
[3] Ishihara, Noritaka
[4] Kishida, Hideyuki
[5] Takahashi, Masahiro
[6] Yamazaki, Shunpei
[7] Kanzaki, Yohsuke
[8] Matsukizono, Hiroshi
[9] Mori, Shigeyasu
[10] Matsuo, Takuya
来源
| 2013年 / Blackwell Publishing Ltd卷 / 44期
关键词
D O I
10.1002/j.2168-0159.2013.tb06169.x
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Molecular orbital examination of negative-bias temperature instability mechanism
    Maruizumi, T.
    Ushio, J.
    Shiraki, Y.
    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 409 - +
  • [2] Negative-Bias with Illumination Stress Induced State Creation in Amorphous InGaZnO Thin-Film Transistor
    Furuta, M.
    Hung, M. P.
    Jiang, J.
    Wang, D.
    Tomai, S.
    Hayasaka, H.
    Yano, K.
    2013 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 4), 2013, 54 (01): : 127 - 134
  • [3] Mechanism of increase in SRAM Vmin due to negative-bias temperature instability
    Carlson, Andrew
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2007, 7 (03) : 473 - 478
  • [4] Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs
    Guo, Alex
    del Alamo, Jesus A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (05) : 2142 - 2147
  • [5] Negative-Bias Temperature Instability of GaN MOSFETs
    Guo, Alex
    del Alamo, Jesus A.
    2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
  • [6] Physical mechanisms of negative-bias temperature instability
    Tsetseris, L
    Zhou, XJ
    Fleetwood, DM
    Schrimpf, RD
    Pantelides, ST
    APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3
  • [8] The role of hydrogen migration in negative-bias temperature instability
    Ushio, J
    Watanabe, K
    Kushida-Abdelghafar, K
    Maruizumi, T
    APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 258 - 263
  • [9] Negative-bias temperature instability induced electron trapping
    Campbell, J. P.
    Cheung, K. P.
    Suehle, J. S.
    Oates, A.
    APPLIED PHYSICS LETTERS, 2008, 93 (03)
  • [10] Negative-bias temperature instability cure by process optimization
    Scarpa, Andrea
    Ward, Derek
    Dubois, Jerome
    van Marwijk, Leo
    Gausepohl, Steven
    Campos, Richard
    Sim, Kwang Ye
    Cacciato, Antonio
    Kho, Ramun
    Bolt, Mike
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (06) : 1331 - 1339