Suppression of current hysteresis in carbon nanotube thin-film transistors

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作者：
Tsukagoshi, Kazuhito [1 ,2 ]
Sekiguchi, Masahiro [1 ,3 ]
Aoyagi, Yoshinobu [1 ,2 ,3 ]
Kanbara, Takayoshi [1 ,4 ]
Takenobu, Taishi [2 ,4 ]
Iwasa, Yoshihiro [2 ,4 ]
机构：
[1] RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
[2] CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 333-0012, Japan
[3] Tokyo Institute of Technology, Yokohama 336-8502, Japan
[4] Institute for Material Research, Tohoku University, Sendai 980-8577, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 20-24期
关键词：
Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon; and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors. © 2007 The Japan Society of Applied Physics;
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