Integration of SCAPS-1D and density functional theory for the performance evaluation of RbGeI3-based perovskite solar cell

被引:0
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作者
Ravidas, Babban Kumar [1 ]
Kumar, Ajmera Raj [2 ]
Praveen, Azmeera [2 ]
Agnihotri, Suneet Kumar [3 ]
Bhattarai, Sagar [4 ]
Pandey, Rahul [5 ]
Madan, Jaya [5 ]
Singh, Shailendra [6 ]
Hossain, M. Khalid [7 ]
Roy, Mukesh Kumar [1 ]
Samajdar, Dip Prakash [2 ]
机构
[1] Department of Natural Science, PDPM Indian Institute of Information Technology Design and Manufacturing, Madhya Pradesh, Jabalpur,482005, India
[2] Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology Design and Manufacturing, Jabalpur,482005, India
[3] Department of Electronics and Communication Engineering, GLA University, Uttar Pradesh, Mathura,281406, India
[4] Technology Innovation and Development Foundation, Indian Institute of Technology, Assam, Guwahati,781039, India
[5] VLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Punjab, India
[6] Department of Electronics and Communication Engineering, Pranveer Singh Institute of Technology, Uttar Pradesh, Kanpur,209305, India
[7] Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka,1349, Bangladesh
关键词
Perovskite;
D O I
10.1016/j.jpcs.2024.112325
中图分类号
学科分类号
摘要
The instability of organic-inorganic perovskites in the presence of heat, light, or moisture coupled with the presence of carcinogenic lead (Pb) motivated researchers to look for alternatives in the form of Pb-free all-inorganic perovskite materials as potential absorbers for designing stable and efficient solar cells. In this study, SCAPS-1D is utilized to study the photovoltaic performance of all-inorganic Pb-free RbGeI3-based planar n-i-p perovskite solar cell (PSC). The optoelectronic characteristics of RbGeI3 are obtained using WIEN2K within the density functional theory framework. Twenty-five different combinations of RbGeI3-based device architectures with different ETLs and HTLs are explored out of which the best PSC architecture is chosen for further analysis. We show that the device structure FTO/TiO2/RbGeI3/PTAA/Au exhibited a remarkable power conversion efficiency (PCE) of 24.03 %, a high fill factor (FF) of 79.85 %, an open circuit voltage (Voc) of 0.88 V, and a short circuit current density (Jsc) of 33.83 mA/cm2. Enhanced optimized performance characteristic is obtained through the variation of the defect density, bandgap, and thickness of the RbGeI3 layer. This paper proposes a new way of studying the photovoltaic characteristics of lead-free perovskite absorbers. © 2024 Elsevier Ltd
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