Effect of hydroxyl group of polymer gate insulators on characteristics of dihexylsexithiophene organic field-effect transistors using poly(p- silsesquioxane) derivatives

被引：0
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作者：
Kajii, Hirotake [1 ]
Okuya, Hiroshi [1 ]
Sakakibara, Akinori [1 ]
Fukuda, Shohei [1 ]
Ogata, Toshiyuki [2 ]
Takahashi, Motoki [2 ]
Ohmori, Yutaka [1 ]
机构：
[1] Center for Advanced Science and Innovation, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
[2] Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 2 PART 2期
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页码：1311 / 1314
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