Thin film diamond advances the semiconductor industry

被引:0
|
作者
Hickey, Diane P. [1 ]
Kane, Neil [1 ]
Carlisle, John [1 ]
机构
[1] Advanced Diamond Technologies, Inc., 429 B Weber Road #286, Romeoville, IL 60446, United States
来源
Advanced Materials and Processes | 2010年 / 168卷 / 05期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:56 / 57
相关论文
共 50 条
  • [1] Thin Film Diamond Advances the Semiconductor Industry
    Hickey, Diane P.
    Kane, Neil
    Carlisle, John
    ADVANCED MATERIALS & PROCESSES, 2010, 168 (05): : 56 - 57
  • [2] Review of advances in diamond thin film synthesis
    Srikanth, V. V. S. S.
    PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART C-JOURNAL OF MECHANICAL ENGINEERING SCIENCE, 2012, 226 (C2) : 303 - 318
  • [3] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
    Fortunato, E.
    Barquinha, P.
    Martins, R.
    ADVANCED MATERIALS, 2012, 24 (22) : 2945 - 2986
  • [4] Diamond thin film deposition on amorphous diamond film surface
    He, Jintian
    Liu, Da-jun
    Wang, Xiaoping
    Zhang, Binglin
    Wang, Jianen
    Shen, Shu-po
    Proceedings of SPIE - The International Society for Optical Engineering, 1994, 2364 : 588 - 590
  • [5] Metal-semiconductor-metal photodiodes fabricated from thin-film diamond
    Looi, HJ
    Whitfield, MD
    Jackman, RB
    APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3332 - 3334
  • [6] Recent advances in diamond power semiconductor devices
    Umezawa, Hitoshi
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 78 : 147 - 156
  • [7] THIN-FILM DIAMOND
    COLLINS, CB
    DAVANLOO, F
    JUENGERMAN, EM
    OSBORN, WR
    JANDER, DR
    LEE, TJ
    TEXAS JOURNAL OF SCIENCE, 1989, 41 (04): : 343 - 358
  • [8] Electrochemistry of diamond thin film
    Zhi, JF
    Tian, RH
    PROGRESS IN CHEMISTRY, 2005, 17 (01) : 55 - 63
  • [9] Micromachining of diamond thin film
    Shibata, T
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2000, 10 (03): : 161 - 175
  • [10] Advances in copper CVD for the semiconductor industry
    Norman, JAT
    JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3): : 497 - 503