Monte-Carlo simulation of the point spread function of CCD

被引:0
|
作者
Huang C. [1 ,2 ]
Wang Z. [1 ]
Zhang B. [1 ]
Liu W. [1 ]
机构
[1] Academy of Optic-Electronics, Chinese Academy of Sciences
[2] Graduate University of Chinese Academy of Sciences
来源
Guangxue Xuebao/Acta Optica Sinica | 2010年 / 30卷 / 09期
关键词
CCD; Field-free region; Monte-Carlo method; Optics in computing; Point spread function(PSF);
D O I
10.3788/AOS20103009.2703
中图分类号
学科分类号
摘要
Charge coupled device (CCD) is a pivotal module of imaging system. The point spread function (PSF) of CCD is an important part of the PSF of imaging system. A back-illuminated , partially depleted CCD is studied. The movements of the carriers in the CCD are analysed. The PSF are simulated based on Monte-Carlo method. The simulative PSF can well match analytical PSF which are also computed. The main characteristics of CCD are analyzed, such as responsibility, linearity and modulation transfer function. The influences to PSF caused by the change of wavelength and field-free region are simulated, which show that better PSF can be attained by smaller field-free region or longer wavelength.
引用
收藏
页码:2703 / 2709
页数:6
相关论文
共 19 条
  • [1] Widenhorn R., Weber A., Blouke M.M., Et al., PSF measurements on back-illuminated CCDs, 5017, pp. 176-184, (2003)
  • [2] Guo Y., Fu X., Zou H., Measurements of ooint spread function and noise response characteristics of MSC794-type CCD cameras, J. Jinan University(Natural Science), 27, 5, pp. 693-698, (2006)
  • [3] Lavine J.P., Chang W., Anagnostopoulos C.N., Et al., Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices, Transactions on Electron Devices, 32, 10, pp. 2087-2091, (1985)
  • [4] Jiang M., Hu B., Ma Q., Et al., Study on point spread function of neutron pinhole imaging system simulation, Acta Photonica Sinica, 37, 2, pp. 310-313, (2008)
  • [5] Ma Q., Tang S., Hu B., Et al., Simulation on point spread function of a pinhole imaging system for 6 MeV neutrons, Nuclear Techniques, 31, 1, pp. 23-26, (2008)
  • [6] Moglestue C., Monte Carlo particle modeling of small semiconductor devices, Camp. Meth. Appl. Mech. Engng., 30, pp. 173-208, (1982)
  • [7] Price P.J., Monte Carlo calculation of electron transport in solids, Semicond. Semimer., 14, pp. 249-308, (1979)
  • [8] Anagnostopoulos C.N., Nelson E.T., Lavine J.P., Et al., Latch-up and image crosstalk suppression by internal gettering, IEEE Trans. Electron Devices, 33, pp. 225-231, (1984)
  • [9] Jackson J.D., Classical Electrodynamics, (1975)
  • [10] Anderson J.B., A random-walk simulation of the Schrodinger equation: H<sub>3</sub><sup>+</sup>, J. Chem. Phys., 63, pp. 1499-1503, (1975)