Analysis of low metallic contamination on silicon wafer surfaces by vapor-phase treatment and total reflection X-ray fluorescence analysis

被引：0
|
作者：
Shimazaki, Ayako [1 ]
Miyazaki, Kunihiro [1 ]
Matsumura, Tsuyoshi [1 ]
Ito, Shoko [1 ]
机构：
[1] Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 12期
关键词：
We have developed a new practical method for quantifying metallic contaminants with concentrations as low as 109 atoms/ cm2 on silicon wafer surfaces. It is named VPT-TXRF and uses vapor-phase treatment (VPT) with a total reflection X-ray fluorescence analysis (TXRF) system. VPT can change the form of metallic impurities on the surface from thin-film type to particulate type and thus the detected X-ray intensity is increased because of the inherent nature of TXRF; namely; the angular dependence of fluorescence yield. By this method; high sensitivity was achieved within a practical measuring time of 500 s; while maintaining the original surface contamination distribution of the wafers. We are convinced that this method will become the most useful monitoring method for the critical process contamination of the future ultra-large-scale-integration (ULSI) manufacturing line. © 2006 The Japan Society of Applied Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
下载
收藏
页码：9037 / 9043
相关论文
共 50 条
  • [1] Analysis of low metallic contamination on silicon wafer surfaces by vapor-phase treatment and total reflection X-ray fluorescence analysis
    Shimazaki, Ayako
    Miyazaki, Kunihiro
    Matsumura, Tsuyoshi
    Ito, Shoko
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12): : 9037 - 9043
  • [2] Vapor phase treatment-total reflection X-ray fluorescence for trace elemental analysis of silicon wafer surface
    Takahara, Hikari
    Mori, Yoshihiro
    Shibata, Harumi
    Shimazaki, Ayako
    Shabani, Mohammad B.
    Yamagami, Motoyuki
    Yabumoto, Norikuni
    Nishihagi, Kazuo
    Gohshi, Yohichi
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2013, 90 : 72 - 82
  • [3] Calibration issues for total reflection x-ray fluorescence analysis of surface metallic contamination on silicon
    Diebold, AC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (03): : 1919 - 1923
  • [4] Method and mechanism of vapor phase treatment-total reflection X-ray fluorescence for trace element analysis on silicon wafer surface
    Takahara, Hikari
    Mori, Yoshihiro
    Shimazaki, Ayako
    Gohshi, Yohichi
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2010, 65 (12) : 1022 - 1028
  • [5] Analysis of light elements on Si wafer by vapor-phase decomposition/total refection X-ray fluorescence
    Yamagami, M
    Nonoguchi, M
    Yamada, T
    Shoji, T
    Utaka, T
    Mori, Y
    Nomura, S
    Taniguchi, K
    Wakita, H
    Ikeda, S
    BUNSEKI KAGAKU, 1999, 48 (11) : 1005 - 1011
  • [6] Silicon wafer analysis by non-monochromatic total reflection x-ray fluorescence analysis
    Liu, Dayun
    Kawai, Jun
    X-RAY SPECTROMETRY, 2022, 51 (5-6) : 464 - 467
  • [7] Validation of vapor phase decomposition-droplet collection-total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers
    Hellin, D
    Rip, J
    Arnauts, S
    De Gendt, S
    Mertens, PW
    Vinckier, C
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2004, 59 (08) : 1149 - 1157
  • [8] Collection Efficiency of Vapor Phase Decomposition on Metallic Impurities for Total Reflection X-Ray Fluorescence Analysis
    Liou, Bor Wen
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2013, 10 (05) : 1072 - 1079
  • [9] Detection of unknown localized contamination on silicon wafer surface by sweeping-total reflection X-ray fluorescence analysis
    Mori, Y
    Uemura, K
    Kohno, H
    Yamagami, M
    Yamada, T
    Shimizu, K
    Onizuka, Y
    Iizuka, Y
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2004, 59 (08) : 1277 - 1282
  • [10] Comparison of direct-total-reflection X-ray fluorescence, sweeping-total-reflection X-ray fluorescence and vapor phase decomposition-total-reflection X-ray fluorescence applied to the characterization of metallic contamination on semiconductor wafers
    Danel, Adrien
    Cabuil, Nicolas
    Lardin, Thierry
    Despois, Dominique
    Veillerot, Marc
    Geoffroy, Charles
    Yamagami, Motoyuki
    Kohno, Hiroshi
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2008, 63 (12) : 1375 - 1381
12345