Power MOSFET performance

被引：0

作者：

Texas Instruments Power Stage BU, 116 Research Drive, Bethlehem ^{[1
]}

18015, United States

机构：

来源：

SpringerBriefs Appl. Sci. Technol. | / 25-35期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Power MOSFET

引用

共 50 条

[1] Performance requirements for power MOSFET models
Budihardjo, IK
Lauritzen, PO
Mantooth, HA
[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 1997, 12 (01) : 36 - 45
[2] Low power and high performance MOSFET
Boopathy, Veera E.
Raghul, G.
Karthick, K.
[J]. 2015 INTERNATIONAL CONFERENCE ON VLSI SYSTEMS, ARCHITECTURE, TECHNOLOGY AND APPLICATIONS (VLSI-SATA), 2015,
[3] High performance RF power MOSFET
Pathirana, GPV
Udrea, F
[J]. ELECTRONICS LETTERS, 2002, 38 (21) : 1286 - 1288
[4] POWER MOSFET PERFORMANCE CONTINUES TO IMPROVE
KINZER, D
SHERIDAN, G
[J]. ELECTRONIC PRODUCTS MAGAZINE, 1993, 36 (04): : 49 - &
[5] High performance power MOSFET SPICE macromodel
Maxim, A
Andreu, D
Boucher, J
[J]. ISIE '97 - PROCEEDINGS OF THE IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, VOLS 1-3, 1997, : 189 - 194
[6] Performance modeling of RF power MOSFET's
Trivedi, M
Khandelwal, P
Shenai, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1794 - 1802
[7] A HIGH-PERFORMANCE PLANAR POWER MOSFET
COEN, RW
TSANG, DW
LISIAK, KP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) : 340 - 343
[8] MOSFET power
Kessler, E
[J]. ELECTRONICS WORLD, 2002, 108 (1792): : 59 - 59
[9] POWER MOSFET
YOSHIDA, H
SHIBATA, Y
USUNAGA, Y
[J]. NEC RESEARCH & DEVELOPMENT, 1984, (73): : 85 - 90
[10] High Performance Trench Gate Power MOSFET of Indium Phosphide
Tahalyani, Geeta
Saxena, Raghvendra Sahai
Vigneswaran, T.
[J]. NANOELECTRONIC MATERIALS AND DEVICES, VOL III, 2018, 466 : 175 - 181