Study of CMOS compatible micromachined thermopile infra-red detector array

被引:0
|
作者
Xu D.-H. [1 ,2 ]
Xiong B. [1 ]
Wang Y.-L. [1 ]
机构
[1] State Key Laboratory of Transducer Technology, Science and Technology on Micro-system Laboratory, Chinese Academy of Sciences Shanghai Institute of Microsystem and Information Technology
[2] Graduate School of Chinese Academy of Sciences
关键词
CMOS compatible; Detector array; IR detector; Micromachined thermopile;
D O I
10.3785/j.issn.1008-973X.2011.06.013
中图分类号
学科分类号
摘要
Two 2 times; 2 parallel-connected and series-connected micromachined thermopile infra-red (IR) detector arrays were designed and fabricated. The N-poly/Al thermocouples were placed on a floating SiO2-Si3N4-SiO2 dielectric membrane, which was released by XeF2 front-side dry isotropic etching. Since XeF2 dry etching process was used for the thermopile structure release, the fabrication yield is enhanced; because both the material and process are fully compatible with CMOS technology, the fabrication cost is reduced and the fabricated detector arrays also have the potential for mass production. For the two-dimensional parallel-connected thermopile IR detector array, the experimental results show that the parallel-connected structure can be used for scanningarea IR detection. For the series-connected thermopile IR detector array, the experimental results show that the series-connected structure can improve the detector's output voltage and specific detectivity, but without the improvement of responsivity.
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页码:1043 / 1047+1107
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