Silicate layer formation at HfO2/SiO2/Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy

被引：0
|
作者：
He, G. [1 ]
Zhang, L.D. [1 ]
Fang, Q. [2 ]
机构：
[1] Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
[2] London Centre for Nanotechnology and Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
来源：
Journal of Applied Physics | 2006年 / 100卷 / 08期
关键词：
Hafnium compounds;
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摘要：
Journal article (JA)
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