In situ photocurrent measurements of thin-film semiconductors during plasma-enhanced chemical vapor deposition

被引：0
|
作者：
机构：
[1] Nunomura, Shota
[2] Sakata, Isao
[3] Kondo, Michio
来源：
| 2013年 / Japan Society of Applied Physics卷 / 06期
关键词：
Photocurrents - Amorphous silicon - Plasma CVD - Amorphous films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Time evolutions of photocurrents in hydrogenated amorphous silicon films under plasma-enhanced chemical vapor deposition have been measured. The photocurrent is gradually increased with growth time, and the corresponding photoconductivity is improved. The improvement is dependent on the temperature, and more pronounced during postgrowth annealing. The postgrowth annealing plays an important role in improving the transport of photoexcited carriers. © 2013 The Japan Society of Applied Physics.
引用
收藏
相关论文
共 50 条
  • [1] In situ Photocurrent Measurements of Thin- Film Semiconductors during Plasma-Enhanced Chemical Vapor Deposition
    Nunomura, Shota
    Sakata, Isao
    Kondo, Michio
    APPLIED PHYSICS EXPRESS, 2013, 6 (12)
  • [2] THIN-FILM DEPOSITION ON INSIDE SURFACES BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    JANSEN, F
    KROMMENHOEK, S
    THIN SOLID FILMS, 1994, 252 (01) : 32 - 37
  • [3] Transient Phenomena in Plasma-Enhanced Chemical Vapor Deposition Processes of Thin-Film Silicon
    Nunomura, Shota
    Yoshida, Isao
    Kondo, Michio
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (10) : 1061021 - 1061025
  • [4] Exploration of Plasma-Enhanced Chemical Vapor Deposition as a Method for Thin-Film Fabrication with Biological Applications
    Vasudev, Milana C.
    Anderson, Kyle D.
    Bunning, Timothy J.
    Tsukruk, Vladimir V.
    Naik, Rajesh R.
    ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (10) : 3983 - 3994
  • [5] SPECTROSCOPIC STUDY OF PLASMA-ENHANCED ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION FOR SUPERCONDUCTING THIN-FILM FORMATION
    EBIHARA, K
    KANAZAWA, S
    IKEGAMI, T
    SHIGA, M
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) : 1151 - 1156
  • [6] FORMATION OF THIN-FILM DIELECTRICS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (REMOTE PECVD)
    LUCOVSKY, G
    TSU, DV
    KIM, SS
    MARKUNAS, RJ
    FOUNTAIN, GG
    APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 33 - 56
  • [7] Lithium-manganese-oxide thin-film cathodes prepared by plasma-enhanced chemical vapor deposition
    Liu, P
    Zhang, JG
    Turner, JA
    Tracy, CE
    Benson, DK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (06) : 2001 - 2005
  • [8] The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition
    Kuwahara, Takuya
    Ito, Hiroshi
    Kawaguchi, Kentaro
    Higuchi, Yuji
    Ozawa, Nobuki
    Kubo, Momoji
    SCIENTIFIC REPORTS, 2015, 5
  • [9] The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition
    Takuya Kuwahara
    Hiroshi Ito
    Kentaro Kawaguchi
    Yuji Higuchi
    Nobuki Ozawa
    Momoji Kubo
    Scientific Reports, 5
  • [10] Spatially resolved in situ diagnostics for plasma-enhanced chemical vapor deposition film growth
    McCauley, TS
    Israel, A
    Vohra, YK
    Tarvin, JT
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (04): : 1860 - 1865
12345