Numerical study of turnstile operation in random-multidot-channel field-effect transistor

被引：0

作者：

Ikeda, Hiroya ^{[1
]}

Tabe, Michiharu ^{[1
]}

机构：

[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

来源：

Journal of Applied Physics | 2006年 / 99卷 / 07期

关键词：

We have numerically studied the single-charge transfer operation in two-dimensional (2D) random-multidot-channel field-effect transistors (FETs) using orthodox theory of the Coulomb blockade phenomenon. The randomness of the multidot structure is reflected in the gate capacitance (Cg) in the equivalent circuit; embodying the dot-size disorder of the realistic devices developed in our laboratory. It was found that turnstile operation meaning that individual electron is transferred one by one from the source to the drain with a cycle of an alternating gate voltage can be performed in both random and homogeneous 2D multidot-channel FETs; although their equivalent circuits are significantly different from the ordinary four-junction turnstile device. By increasing the Cg randomness; some devices show that the average gate and drain bias condition (Vg0; Vd) which allows the turnstile operation is more relaxed. Consequently; the random-multidot-channel FET can work as a single-electron turnstile device. © 2006 American Institute of Physics;

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